1
Reflective Photosensors (Photo Reflectors)
CNZ2152
Reflective Photosensor
Overview
CNZ2152 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Features
Fast response
High sensitivity
High SN ratio
Applications
Detection of paper, film and cloth
Optical mark reading
Detection of coin and bill
Detection of position and edge
Start, end mark detection of magnetic tape
*1
Standard white paper (reflective ratio 90%)
*2
Tracing paper (paper SM-1 for 2nd original paper)
,
,,,
,,,
Unit : mm
(10.0)
(2.54)
4-0.45
0.9
+0.1
0.2
+0.1 0.2
+0.1
0.2
14.0
16.0
0.3
1.0
10.0
0.2
6.2
0.2
7.0 min.
1.0(typ.)
2.2
0.2
Mark for
indicating
LED side
1.5
3.5
0.2
3.2
0.2
8.0
0.2
Pin connection
1
4
3
2
,,
,
2
3
1
4
(Note) ( ) Dimension is reference
,
,,,
,
,,
,,
,,,,
,
R
L
I
F
I
C
V
CC
d = 5 mm
Test paper
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
3
V
emitting diode)
Forward current (DC)
I
F
100
mA
Power dissipation
P
D
*1
150
mW
Collector to emitter voltage
V
CEO
20
V
Output (Photo Emitter to collector voltage
V
ECO
3
V
transistor)
Collector current
I
C
30
mA
Collector power dissipation
P
C
*2
150
mW
Temperature
Operating ambient temperature
T
opr
25 to +85
C
Storage temperature
T
stg
30 to +100
C
Electrical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 100mA
1.25
1.5
V
characteristics Reverse current (DC)
I
R
V
R
= 3V
10
A
Output characteristics Collector cutoff current
I
CEO
V
CE
= 10V
0.05
2
A
Collector current
I
C
*1
V
CC
= 5V, I
F
= 20mA, R
L
= 100
0.8
3
mA
Transfer
I
C
*2
500
A
characteristics Response time
t
r
*3
, t
f
*4
V
CC
= 10V, I
C
= 1mA, R
L
= 100
8
s
Collector to emitter saturation voltage V
CE(sat)
I
F
= 100mA, I
C
= 1mA
0.6
V
*1 *2
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
*3
Time required for the collector current to increase from
10% to 90% of its final value.
*4
Time required for the collector current to decrease from
90% to 10% of its initial value.
*1
Input power derating ratio is
2.0 mW/C at Ta
25C.
*2
Output power derating ratio is
2.0 mW/C at Ta
25C.
2
CNZ2152
Reflective Photosensors (Photo Reflectors)
120
100
80
60
40
20
Ambient temperature Ta (C )
0
20
40
60
80
100
0
25
I
F
-- V
F
120
60
40
20
100
80
Forward voltage V
F
(V)
Forward current I
F
(mA)
0.4
0.8
1.2
1.6
2.4
2.0
0
0
Ta = 25C
V
F
-- Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (C )
Forward voltage V
F
(V)
0
20
40
60
80
100
0
40 20
0
20
40
60
80
100
40 20
0
20
40
60
80
100
40 20
I
C
-- I
F
10
2
10
1
10
1
Forward current I
F
(mA)
Collector current I
C
(mA)
1
10
10
2
10
2
10
1
V
CC
= 5V Ta = 25C
R
L
= 100
(1) White paper
(Reflective ratio 90%)
(2) Tracing paper
(Paper SM - 1 for 2nd
original paper)
I
C
-- V
CE
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
16
8
4
12
4
8
12
16
20
24
0
0
Ta = 25C
Relative output current I
C
(%)
I
C
-- Ta
160
120
80
40
Ambient temperature Ta (C )
0
V
CC
= 5V
I
F
= 20mA
R
L
= 100
I
CEO
-- Ta
10
3
10
2
1
10
1
10
Ambient temperature Ta (C )
Dark current I
CEO
(
A)
10
2
1
10
10
1
t
r
-- I
C
10
1
Collector current I
C
(mA)
Rise time t
r
(
s)
10
1
10
2
10
3
10
2
V
CC
= 10V
Ta = 25C
I
C
-- d
16
8
4
12
Distance d (mm)
Collector current I
C
(mA)
2
4
12
10
8
6
0
0
V
CC
= 5V
Ta = 25C
I
F
= 20mA
R
L
= 100
I
F
, I
C
-- Ta
Forward current, collector current I
F
, I
C
(mA)
(1)
(2)
I
F
= 100mA
80mA
60mA
50mA
40mA
30mA
20mA
10mA
V
CE
= 25V
10V
R
L
= 1k
100
White paper (Reflective ratio 90%)
Mirror
I
F
I
C
I
F
= 100mA
50mA
,
,
d
10%
90%
t
d
t
r
t
f
R
L
V
CC
V
1
V
2
V
1
V
2
Sig.
OUT
50
Sig.IN
,,
,
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